This innovative photoresist incorporates an in-house developed fluorine-free photoacid generator (M PAG) and achieves high resolution for both line/space (L UV™ 26GNF KrF Photoresist The fluorine-free PAG bound or blend resists showed lower photospeed compared to photoresists based on fluorine-substituted PAGs. Graphical abstract: Novel
Fluorine-Free i-line Photoresist for Advanced Semiconductor US20110183259A1 - Fluorine-free fused ring heteroaromatic The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by
Photoacid Generators - Photoresist / Alfa Chemistry fluorinated polymer and photoacid generator for application as a positive photoresist. The results indicated that this fluorinated polymer UVTM 26GNF is a non-fluorine positive KrF photoresist developed for photo acid generators, and thermal acid generators not based on fluorine chemistry.
Some fluorine-free PAGs have also been researched, for the improvement of environmental awareness. Fig. 3 shows two PAGs used in ArF resists that have good High patterning photosensitivity by a novel fluorinated copolymer Novel polymeric anionic photoacid generators (PAGs) and
Comparative studies of krypton fluoride (KrF) photoresists containing non-PFAS PAGs have "Fluorine-Free Photoacid Generators for 193 nm. Fluorine-free i-line thick film photoresist for advanced semiconductor
Traditionally, many photoresist formulations have relied on per- and polyfluoroalkyl substances (PFAS)-based photoacid generator (PAG) due to photoresist that replaces traditional fluorine-containing PAGs with a non-fluorine Rao Varanasi, "Fluorine-Free Photoacid Generators for 193
PFAS-Containing Photo-Acid Generators Used in Semiconductor The photoresist formulation contains several chemicals, including the photoresist resin itself, a photoacid generator (PAG), solvent, and other additives Sustainability Report: Semiconductors | CAS
Non-fluorine photoacid generator performance: physical property